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  • 浙江晶泰半導體有限公司 致力于半導體設備領域里開創新局面!

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    產品詳情 / Product Details位置: 首頁 > 晶泰產品 > YTC150-MCZ電子級單晶爐

    主要性能指標


    爐室資料Puller Data
    坩堝直徑Crucible  diameter:  20〞- 24〞
    單晶直徑Crystal diameter:  8〞- 12〞(200-300mm)
    裝料量Charge size:  90-150kg
    喉管直徑Throat Diameter:  14 ”(356mm)
    主爐膛內徑Main furnace Diameter: ¢1120mm
    主爐膛高度Main furnace Height: 1480mm
    爐門開口尺寸Pull Chamber Door Opening: 15”×82”(380mm×2082mm)
    主真空泵抽速Vacuum Pumps-Main: 221 cfm (6,260 l/min)
    輔助真空泵抽速(Recommended) Aux: 60 cfm (1700 l/min)
    排氣方式Exhaust:底排氣Exhaust end
    副室類型Deputy room type:全開門Full-door
    爐蓋類型Lid Type:穹頂Dome
    磁場類型Field type:勾型、水平型(可選)hook type, horizontal type (optional)
    有導流筒提升、激光測距、CCD控徑
    There draft tube upgrade, laser ranging, CCD control path
    可提供二次加料providing secondary feed


    坩堝驅動單位Crucible drive unit
    提升速度Lifting speed:  0-10 in/hr (0-254mm/hr)
    最快提升速度Crucible Jog Speed:2.0 in/min (50.8mm/min)
    行程Stroke:  18〞(457mm)
    轉速Rotation speed:   0-20 rpm


    晶驅動單位 Crystal drive unit
    提升速度Lifting speed:0-20 in/hr (0-508mm/hr)
    快速提升速度Seed Jod Speed:20 in/min (508/min)
    轉速Rotation speed:0-50 rpm


    廠務要求Utilities
    電源電壓(Source Voltage): 380V±10%
    頻率(Frequency): 50/60 Hz
    加熱功率(Heating Power): 260KW底部加熱50KW
    環境溫度(Ambient Temperature): 5~40
    相對濕度(Relative Humidity):<70%
    入口端最高水溫(Maximum Inlet Temperature) :77°F (25℃)      
    最小流量(Minimum Flow Rate): 78 gpm (295 1/min) total
    入口出口壓力差(Diff. Supply Pressure): 30 psi (2.1kg/cm2)  
    主氬氣流量(Mass Flow Control(Max.): 200 slpm
    吹掃流量(Purge Flow): 100 slpm
    合計(Facility Total): 300 slpm
    推薦壓力(Recommended Supply Pressure): 75 psi (5.3kg/ cm2)
    壓縮空氣(Air)
    推薦壓力(Recommended Supply Pressure): 90psi (6.3kg/ cm2)


    控制系統System Control
    自動過程Automatic process
    標準PLC/PC控制control by PLC/PC. Equipped as standard


    外形尺寸Dimensions(approx.)
    總高度 (closed):6722mm
    寬 Width (W):2250mm
    深 Depth (D):3148mm


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